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TPC8012-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV)
TPC8012-H
Switching Regulator Applications DCDC Converter Applications
Unit: mm
* * * *
Low drain-source ON-resistance: RDS (ON) = 0.28 (typ.) High forward transfer admittance: |Yfs| = 1.35 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 200 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 200 200 30 1.8 7.2 1.9 Unit V V V A
Drain power dissipation
W
JEDEC JEITA
2-6J1B
1.0
W
TOSHIBA
Weight: 0.085 g (typ.)
2.05 1.8 0.19 150 -55 to 150 mJ A mJ C C
Circuit Configuration
8 7 6 5
Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care.
1 2 3 4
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TPC8012-H
Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-a)
125
C/W
Marking (Note 5)
TPC8012 H
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 50 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 1.8 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPC8012-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge tf toff Qg Qgs Qgd Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V 50 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.9 A VDS = 10 V, ID = 0.9 A Min 200 3.0 0.65 ID = 0.9 A VOUT RL = 111 VDD 160 V, VGS = 10 V, - ID = 1.8 A Typ. 0.28 1.35 440 80 260 23 28 22 73 11 6 5 Max 10 100 5.0 0.40 ns nC pF Unit A A V V S
VDD 100 V - < 1%, tw = 10 s Duty =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 1.8 A, VGS = 0 V Min Typ. Max 7.2 -1.5 Unit A V
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TPC8012-H
ID - VDS
5 15 10 8 7.6 Common source Ta = 25C Pulse test 5 15 4 8 10 7.6
ID - VDS
7.3 Common source Ta = 25C Pulse test 7
(A)
7.3 7.0
ID
3
ID Drain current
(A)
4
3 6.6 2
Drain current
2
6.6
1
6
1
6
VGS = 5 V 0 0 1 2 3 4 5 0 0 4 8 12 16 20
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
6 Common source VDS = 10 V Pulse test 1.0
VDS - VGS
Common source Ta = 25C Pulse test
5
(V) VDS Drain-source voltage
0.8
(A)
4
ID
0.6 ID = 1.8 A 0.4 0.9 0.2 0.45
Drain current
3
2
Ta = -55C 100
1
25
0
0
2
4
6
8
10
0
0
3
6
9
12
15
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
100 Common source VDS = 10 V Pulse test 1 Common source Ta = 25C Pulse test
RDS (ON) - ID
(S)
Drain-source ON-resistance RDS (ON) ()
|Yfs|
VGS = 10 V
Forward transfer admittance
10 25 Ta = -55C 1 100
0.1
0.1 0.1
1
10
0.01 0.1
1
10
Drain current
ID
(A)
Drain current
ID
(A)
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TPC8012-H
RDS (ON) - Ta
1 Common source Pulse test 0.8 10 Common source Ta = 25C Pulse test
IDR - VDS (A)
Drain-source ON-resistance RDS (ON) ()
0.6
ID = 2.8A,5.5A,11A
Drain reverse current
IDR
10 1 4.5
0.4 VGS = 10 V 0.2
3
1 VGS = 0 V
0 -80
-40
0
40
80
120
160
0.1
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
10000
Capacitance - VDS
5.0
Vth - Ta Vth (V) Gate threshold voltage
4.0
(pF)
1000 Ciss
3.0
Capacitance
C
Coss 100 Crss
2.0 Common source 1.0 VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 80 120 160
10 0.1
Common source Ta = 25C f = 1 MHz VGS = 0 V 1
10
100
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
2.0
PD - Ta
(1)
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b)
Dynamic input/output characteristics
200 Common source ID = 1.8 A Ta = 25C Pulse test 20
(W)
(V)
PD
1.6
160
VDS
16
Drain power dissipation
Drain-source voltage
80 V 160 V 80
(2) 0.8
8
0.4
40
4
0 0 40 80 120 160
0 0
4
8
12
16
0 20
Ambient temperature
Ta
(C)
Total gate charge
Qg
(nC)
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Gate-source voltage
1.2
t = 10 s
VDS
120
VDD = 40 V
12
VGS
(V)
TPC8012-H
rth- tw
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a)
rth (C/W)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
100 (1)
Transient thermal impedance
10
1
0.1 0.001 0.01 0.1 1 10
Single - pulse 100 1000
Pulse width
tw
(s)
Safe operating area
10 ID MAX (Pulse) * t =1 ms * 10 ms * 1
Drain current
ID
(A)
0.1 * Single-pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1
VDSS MAX
0.01 0.1
10
100
1000
Drain-source voltage
VDS
(V)
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TPC8012-H
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-01-17

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